Selective etching of GaAs/Si and InP/GaAs heteroepitaxial wafer

Xiong Zhen; Qi Wang; Zhi-Gang Jia; Yong-Qing Huang; Xiao-Min Ren

doi:10.1117/12.999497

Translator Disclaimer

27 November 2012 Selective etching of GaAs/Si and InP/GaAs heteroepitaxial wafer

Xiong Zhen, Qi Wang, Zhi-Gang Jia, Yong-Qing Huang, Xiao-Min Ren

Author Affiliations +

Proceedings Volume 8555, Optoelectronic Devices and Integration IV; 85550Y (2012) https://doi.org/10.1117/12.999497
Event: Photonics Asia, 2012, Beijing, China

Abstract

GaAs/Si and InP/GaAs wafers growth was performed by low-pressure metal-organic chemical vapor deposition (LPMOCVD) using a two-step growth method. The wet chemical etching methods were used to characterize the dislocations density. For the GaAs/Si wafer, the chemical etching was performed in molten KOH at temperatures about 350°C and for duration about 1.5min. For the InP/GaAs wafer, the chemical etching was performed in H3PO4: HBr (2:1) solution (Huber etchant) at temperatures about 20°C and for duration about 2min.Then, the morphology of the dislocations characteristics of the etch pit density (EPD) were examined with a high-resolution field-effect scanning electron microscope (SEM). There are some ellipse dislocations pits of the GaAs/Si wafer with a density about 2.0x10⁷cm^-2, and sizes ranging from 700nm to 1500nm in diameter, and there are many sunken dislocations pits of the InP/GaAs wafer with a density about 2.0x10⁸cm^-2, and sizes ranging from 300nm to 700nm in diameter. So the method has been accurate and convenient to show the dislocations characteristics of metamorphic GaAs/Si and InP/GaAs wafers.

Citation Download Citation

Xiong Zhen, Qi Wang, Zhi-Gang Jia, Yong-Qing Huang, and Xiao-Min Ren "Selective etching of GaAs/Si and InP/GaAs heteroepitaxial wafer", Proc. SPIE 8555, Optoelectronic Devices and Integration IV, 85550Y (27 November 2012); https://doi.org/10.1117/12.999497

ACCESS THE FULL ARTICLE