Improvement of light extraction efficiency of GaN-based flip-chip light-emitting diodes by patterning the double sides of sapphire

Xiaoqing Du; Hong Chen; Guangming Zhong; Xiangkun Dong; Weimin Chen; Xiaohua Lei; Xianming Liu

doi:10.1117/12.999694

27 November 2012 Improvement of light extraction efficiency of GaN-based flip-chip light-emitting diodes by patterning the double sides of sapphire

Xiaoqing Du, Hong Chen, Guangming Zhong, Xiangkun Dong, Weimin Chen, Xiaohua Lei, Xianming Liu

Author Affiliations +

Proceedings Volume 8560, LED and Display Technologies II; 856008 (2012) https://doi.org/10.1117/12.999694
Event: Photonics Asia, 2012, Beijing, China

Abstract

The double-side patterned sapphire structure was proposed to improve the light extraction efficiency (LEE) of flip-chip GaN-based light-emitting diodes (LEDs). The influences of sapphire substrate thickness, pattern shapes and sizes on LEE were analyzed by Monte Carlo simulation method. Using silicon oxide as mask membrane, double-side patterned sapphires were processed by the standard lithography and the reaction-ion-etching (RIE) technology. The LEDs with patterned sapphire were packaged. The measured light outputs of LEDs verified our predicted effects.

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Xiaoqing Du, Hong Chen, Guangming Zhong, Xiangkun Dong, Weimin Chen, Xiaohua Lei, and Xianming Liu "Improvement of light extraction efficiency of GaN-based flip-chip light-emitting diodes by patterning the double sides of sapphire", Proc. SPIE 8560, LED and Display Technologies II, 856008 (27 November 2012); https://doi.org/10.1117/12.999694

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