Design of 800x2 low-noise readout circuit for near-infrared InGaAs focal plane array

Zhangcheng Huang; Songlei Huang; Jiaxiong Fang

doi:10.1117/12.999646

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5 December 2012 Design of 800×2 low-noise readout circuit for near-infrared InGaAs focal plane array

Zhangcheng Huang, Songlei Huang, Jiaxiong Fang

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Proceedings Volume 8562, Infrared, Millimeter-Wave, and Terahertz Technologies II; 856205 (2012) https://doi.org/10.1117/12.999646
Event: Photonics Asia, 2012, Beijing, China

Abstract

InGaAs near-infrared (NIR) focal plane arrays (FPA) have important applications in space remote sensing. A design of 800×2 low-noise readout integrated circuit (T800 ROIC) with a pitch of 25 μm is presented for a dual-band monolithic InGaAs FPA. Mathematical analysis and transient noise simulations have been presented for predicting and lowering the noise in T800 ROIC. Thermal noise from input-stage amplifier which plays a dominant role in ROIC is reduced by increasing load capacitor under tradeoff and a low input offset voltage in the range of ±5 mV is obtained by optimizing transistors in the input-stage amplifier. T800 ROIC has been fabricated with 0.5-μm 5V mixed signal CMOS process and interfaced with InGaAs detector arrays. Test results show that ROIC noise is around 90 μV and input offset voltage shows a good correspondence with simulation results. 800×2 InGaAs FPA has a peak detectivity (D*) of about 1.1×10¹² cmHz^1/2/ W, with dynamic range of above 80dB.

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Zhangcheng Huang, Songlei Huang, and Jiaxiong Fang "Design of 800×2 low-noise readout circuit for near-infrared InGaAs focal plane array", Proc. SPIE 8562, Infrared, Millimeter-Wave, and Terahertz Technologies II, 856205 (5 December 2012); https://doi.org/10.1117/12.999646

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