Paper
5 December 2012 A novel quasi-optical subharmonically pumped GaAs diode mixer at 375 GHz
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Abstract
This paper presents the design and characterization of a novel quasioptical subharmonically pumped GaAs Schottky diode mixer at 375 GHz. It features the use of two off-axis twin-slot antennas fed by CPW to receive the RF and LO signals respectively. The mixer circuits together with the antennas are integrated on a silicon extended elliptical lens. Conventional harmonic balance simulations in combination with 3D fullwave simulations in HFSS are carried out to analyze the performance of the mixer. Optimal conversion loss is obtained after impedances of the LO and RF ports are matched.Final simulation results show that the mixer achieves a DSB conversion loss of 10 dB and a noise temperature of 2900 K.
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Jie Hu, Zheng Lou, and Sheng-Cai Shi "A novel quasi-optical subharmonically pumped GaAs diode mixer at 375 GHz", Proc. SPIE 8562, Infrared, Millimeter-Wave, and Terahertz Technologies II, 85620Z (5 December 2012); https://doi.org/10.1117/12.999606
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KEYWORDS
Antennas

Diodes

Silicon

Computer aided design

Gallium arsenide

Waveguides

Advanced distributed simulations

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