Terahertz generation in quasi-phase-matched GaAs wafers by pulse CO2 laser

Zhiming Rao; Xinbing Wang; Duluo Zuo

doi:10.1117/12.2002928

12 March 2013 Terahertz generation in quasi-phase-matched GaAs wafers by pulse CO₂ laser

Zhiming Rao, Xinbing Wang, Duluo Zuo

Proceedings Volume 8604, Nonlinear Frequency Generation and Conversion: Materials, Devices, and Applications XII; 860415 (2013) https://doi.org/10.1117/12.2002928
Event: SPIE LASE, 2013, San Francisco, California, United States

Abstract

An coherent terahertz (THz) source was reported by quasi-phase matched different frequency generation in a stacked GaAs wafers pumped by one CO₂ laser with dual-wavelength output. The THz generation was increased with the increase of the number of GaAs wafers. The maximum single pulse energy of 12 nJ was generated at a frequency of 0.94 THz (319 μm) by using ten GaAs wafers, corresponding to a peak output power 200 mW

Citation Download Citation

Zhiming Rao, Xinbing Wang, and Duluo Zuo "Terahertz generation in quasi-phase-matched GaAs wafers by pulse CO₂ laser", Proc. SPIE 8604, Nonlinear Frequency Generation and Conversion: Materials, Devices, and Applications XII, 860415 (12 March 2013); https://doi.org/10.1117/12.2002928

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