20.8W TM polarized GaAsP laser diodes of 808nm wavelength

Peixu Li; Kai Jiang; Xin Zhang; Qingmin Tang; Wei Xia; Shuqiang Li; Zhongxiang Ren; Xiangang Xu

doi:10.1117/12.2002983

26 February 2013 20.8W TM polarized GaAsP laser diodes of 808nm wavelength

Peixu Li, Kai Jiang, Xin Zhang, Qingmin Tang, Wei Xia, Shuqiang Li, Zhongxiang Ren, Xiangang Xu

Proceedings Volume 8605, High-Power Diode Laser Technology and Applications XI; 860510 (2013) https://doi.org/10.1117/12.2002983
Event: SPIE LASE, 2013, San Francisco, California, United States

Abstract

In this paper, we present a high power TM Polarized GaAsP laser diode of 808nm wavelength. For high power and narrow beam divergence, an asymmetry broad waveguide structure and a tensile strained GaAsP quantum well were used and the epilayers were grown by low-pressure metalorganic chemical vapor deposition. We have obtained an optical power of 20.86W at 20A without COMD and the vertical farfield of 27°. It is expected that Al-free GaAsP quantum well laser diodes will have good reliability without any facet treatment.

Citation Download Citation

Peixu Li, Kai Jiang, Xin Zhang, Qingmin Tang, Wei Xia, Shuqiang Li, Zhongxiang Ren, and Xiangang Xu "20.8W TM polarized GaAsP laser diodes of 808nm wavelength", Proc. SPIE 8605, High-Power Diode Laser Technology and Applications XI, 860510 (26 February 2013); https://doi.org/10.1117/12.2002983

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available