Heterostructures Of Lattice Mismatched Semiconductors: Fundamental Aspects And Device Perspectives

Paul Voisin

doi:10.1117/12.943413

16 May 1988 Heterostructures Of Lattice Mismatched Semiconductors: Fundamental Aspects And Device Perspectives

Paul Voisin

Proceedings Volume 0861, Quantum Wells and Superlattices in Optoelectronic Devices and Integrated Optics; (1988) https://doi.org/10.1117/12.943413
Event: 1987 Symposium on the Technologies for Optoelectronics, 1987, Cannes, France

Abstract

We examine the structural and electronic properties of heterostructures grown out of lattice mismatched III-V compound semiconductors, with emphasis on their ability to serve as reliable materials for device applications. We also give a brief review of the most striking experimental results reported in the literature, in order to illustrate the diversity of interesting and specific features displayed by thin biaxially strained layers.

Citation Download Citation

Paul Voisin "Heterostructures Of Lattice Mismatched Semiconductors: Fundamental Aspects And Device Perspectives", Proc. SPIE 0861, Quantum Wells and Superlattices in Optoelectronic Devices and Integrated Optics, (16 May 1988); https://doi.org/10.1117/12.943413

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