Paper
25 March 2013 High current generation in dilute nitride solar cells grown by molecular beam epitaxy
A. Aho, A. Tukiainen, V. Polojärvi, J. Salmi, M. Guina
Author Affiliations +
Abstract
We review our recent work concerning the development of dilute nitride solar cells by molecular beam epitaxy. This epitaxial technology enables a high level of control of the growth conditions and alleviates known issues related to epitaxy of dilute nitrides ultimately enabling to achieve high quality materials suitable for solar cell developments. In particular, we focus on discussing the mechanisms linking the epitaxial and annealing conditions to the operation of dilute nitride solar cells. We also report operation of a single junction dilute nitride solar cell with a short circuit current density as high as ~39 mA/cm2 under 1 sun illumination.
© (2013) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
A. Aho, A. Tukiainen, V. Polojärvi, J. Salmi, and M. Guina "High current generation in dilute nitride solar cells grown by molecular beam epitaxy", Proc. SPIE 8620, Physics, Simulation, and Photonic Engineering of Photovoltaic Devices II, 86201I (25 March 2013); https://doi.org/10.1117/12.2002972
Lens.org Logo
CITATIONS
Cited by 15 scholarly publications.
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Solar cells

Annealing

Molecular beam epitaxy

Nitrogen

Epitaxy

Luminescence

Temperature metrology

RELATED CONTENT


Back to Top