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25 March 2013 High current generation in dilute nitride solar cells grown by molecular beam epitaxy
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Abstract
We review our recent work concerning the development of dilute nitride solar cells by molecular beam epitaxy. This epitaxial technology enables a high level of control of the growth conditions and alleviates known issues related to epitaxy of dilute nitrides ultimately enabling to achieve high quality materials suitable for solar cell developments. In particular, we focus on discussing the mechanisms linking the epitaxial and annealing conditions to the operation of dilute nitride solar cells. We also report operation of a single junction dilute nitride solar cell with a short circuit current density as high as ~39 mA/cm2 under 1 sun illumination.
© (2013) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
A. Aho, A. Tukiainen, V. Polojärvi, J. Salmi, and M. Guina "High current generation in dilute nitride solar cells grown by molecular beam epitaxy", Proc. SPIE 8620, Physics, Simulation, and Photonic Engineering of Photovoltaic Devices II, 86201I (25 March 2013); https://doi.org/10.1117/12.2002972
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