Translator Disclaimer
25 March 2013 Ohmic contacts to n-type GaSb grown on GaAs by the interfacial misfit dislocation technique
Author Affiliations +
Low resistance ohmic contacts have been successfully fabricated on n-GaSb layers grown by MBE on semi-insulating (SI) GaAs substrates using the Interfacial Misfit Dislocation (IMF) technique. Although intended for photovoltaic applications, the results are applicable to many antimonide-based devices. The IMF technique enables the growth of epitaxial GaSb layers on semi-insulating GaAs substrates resulting in vertical current confinement not possible on unintentionally doped ~ 1e17 cm-3 p-doped bulk GaSb. Results for low resistance ohmic contacts using NiGeAu, PdGeAu, GeAuNi and GeAuPd metallizations for various temperatures are reported. Specific transfer resistances down to 0.12 Ω-mm and specific contact resistances of < 2e-6 Ω-cm2 have been observed.
© (2013) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
N. Rahimi, A. A. Aragon, O. S. Romero, D. M. Kim, N. B. J. Traynor, T. J. Rotter, G. Balakrishnan, S. D. Mukherjee, and L. F. Lester "Ohmic contacts to n-type GaSb grown on GaAs by the interfacial misfit dislocation technique", Proc. SPIE 8620, Physics, Simulation, and Photonic Engineering of Photovoltaic Devices II, 86201K (25 March 2013);


A gold free fully copper metalized GaAs pHEMT for the...
Proceedings of SPIE (January 08 2013)
Ohmic contacts to GaN with rapid thermal annealing
Proceedings of SPIE (April 17 2000)
Metal contacts to p-type GaN by electroless deposition
Proceedings of SPIE (September 28 2007)
Nonalloyed Pd Ge Ti Pt ohmic contact for the high...
Proceedings of SPIE (May 12 1992)
CO2 laser radiation detection in compensated germanium
Proceedings of SPIE (June 26 2001)
Formation of Ge Cu ohmic contacts to n GaAs with...
Proceedings of SPIE (February 26 2010)

Back to Top