Paper
20 February 2013 Numerical simulation of terahertz plasmons in gated graphene structures
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Abstract
Frequency dispersion and damping mechanisms of two-dimensional plasmons in graphene are studied by the numerical simulation based on the Boltzmann equation. The fundamental plasmon mode in a single-grating-gate structure is studied, and the gate-voltage tunability of its frequency as well as the coupling effect of plasmons in the gated and ungated regions are revealed. It is demonstrated that damping rates due to the acoustic-phonon scattering at room temperature and due to the short- and finite-range disorder scattering can be on the order of 1011 s-1, depending on the level of disorders. In addition, the damping due to the source and drain contacts is reported and its mechanism is discussed.
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A. Satou, V. Ryzhii, F. T. Vasko, V. V. Mitin, and T. Otsuji "Numerical simulation of terahertz plasmons in gated graphene structures", Proc. SPIE 8624, Terahertz, RF, Millimeter, and Submillimeter-Wave Technology and Applications VI, 862412 (20 February 2013); https://doi.org/10.1117/12.2003611
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KEYWORDS
Plasmons

Graphene

Scattering

Plasma

Terahertz radiation

Doping

Dielectrics

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