Numerical simulation of terahertz plasmons in gated graphene structures

A. Satou; V. Ryzhii; F. T. Vasko; V. V. Mitin; T. Otsuji

doi:10.1117/12.2003611

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20 February 2013 Numerical simulation of terahertz plasmons in gated graphene structures

A. Satou, V. Ryzhii, F. T. Vasko, V. V. Mitin, T. Otsuji

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Proceedings Volume 8624, Terahertz, RF, Millimeter, and Submillimeter-Wave Technology and Applications VI; 862412 (2013) https://doi.org/10.1117/12.2003611
Event: SPIE OPTO, 2013, San Francisco, California, United States

Abstract

Frequency dispersion and damping mechanisms of two-dimensional plasmons in graphene are studied by the numerical simulation based on the Boltzmann equation. The fundamental plasmon mode in a single-grating-gate structure is studied, and the gate-voltage tunability of its frequency as well as the coupling effect of plasmons in the gated and ungated regions are revealed. It is demonstrated that damping rates due to the acoustic-phonon scattering at room temperature and due to the short- and finite-range disorder scattering can be on the order of 10¹¹ s^-1, depending on the level of disorders. In addition, the damping due to the source and drain contacts is reported and its mechanism is discussed.

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A. Satou, V. Ryzhii, F. T. Vasko, V. V. Mitin, and T. Otsuji "Numerical simulation of terahertz plasmons in gated graphene structures", Proc. SPIE 8624, Terahertz, RF, Millimeter, and Submillimeter-Wave Technology and Applications VI, 862412 (20 February 2013); https://doi.org/10.1117/12.2003611

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