Thermal properties of InGaN laser diodes and arrays

Szymon Stańczyk; Anna Kafar; Grzegorz Targowski; Przemek Wiśniewski; Irina Makarowa; Tadeusz Suski; Piotr Perlin

doi:10.1117/12.2002494

4 March 2013 Thermal properties of InGaN laser diodes and arrays

Szymon Stańczyk, Anna Kafar, Grzegorz Targowski, Przemek Wiśniewski, Irina Makarowa, Tadeusz Suski, Piotr Perlin

Proceedings Volume 8625, Gallium Nitride Materials and Devices VIII; 862521 (2013) https://doi.org/10.1117/12.2002494
Event: SPIE OPTO, 2013, San Francisco, California, United States

Abstract

Junction temperature of a laser diode (LD) determines the value of threshold current, maximum achievable power and device lifetime. In this work we studied this parameter by a method of comparing current-voltage characteristics measured under pulse bias (at various temperatures) with DC characteristic obtained at room temperature. As exemplary devices we chose various laser diode arrays and single emitter laser with different substrate thickness. The results show, that the primary factor determining thermal resistance of the device is the chip’s surface, which means, that a dominating mechanism is related with a heat transfer between the chip and the heat sink.

Citation Download Citation

Szymon Stańczyk, Anna Kafar, Grzegorz Targowski, Przemek Wiśniewski, Irina Makarowa, Tadeusz Suski, and Piotr Perlin "Thermal properties of InGaN laser diodes and arrays", Proc. SPIE 8625, Gallium Nitride Materials and Devices VIII, 862521 (4 March 2013); https://doi.org/10.1117/12.2002494

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