Dopant profiles in heavily doped ZnO

B. Claflin; K. D. Leedy; D. C. Look

doi:10.1117/12.2009394

18 March 2013 Dopant profiles in heavily doped ZnO

B. Claflin, K. D. Leedy, D. C. Look

Proceedings Volume 8626, Oxide-based Materials and Devices IV; 862606 (2013) https://doi.org/10.1117/12.2009394
Event: SPIE OPTO, 2013, San Francisco, California, United States

Abstract

X-ray photoelectron spectroscopy (XPS) is used to compare the composition as a function of depth of as-grown ZnO films heavily doped with Ga and similar samples annealed in air for 10 min. at 600 °C, with particular attention given to the near-surface region. These films were grown by pulsed laser deposition (PLD) using a ZnO target containing 3 wt% Ga₂O₃. The electrical properties of these samples were determined from temperature-dependent Hall-effect measurements. The as-grown film has the following characteristics: i) a ~1:1 Zn:O ratio with a Ga concentration of ~ 3.3 atomic percent; ii) no excess Ga in the near-surface region; and iii) excellent electrical characteristics: ρ=2.42×10^-4 Ω-cm, n=8.05×10²⁰ cm^-3, and μ=32.1 cm²/V-s at 300 K. For the annealed sample: i) the Zn:O ratio remains ~ 1:1, but the Ga concentration is ~ 3 atomic percent which is ~10% lower than in the as-grown film; ii) ~7 at% Ga is measured in the near-surface region; and iii) a significant increase in resistivity to ρ = 0.99 Ω-cm, n = 1.97×10¹⁸ cm^-3, and μ=3.2 cm²/V-s at 300 K. Analysis of the O chemical shift suggests formation of a mixed ZnO/Ga₂O₃ surface layer ≤ 5 nm thick accounts for the observed changes in the Ga profile after annealing.

Citation Download Citation

B. Claflin, K. D. Leedy, and D. C. Look "Dopant profiles in heavily doped ZnO", Proc. SPIE 8626, Oxide-based Materials and Devices IV, 862606 (18 March 2013); https://doi.org/10.1117/12.2009394

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