Effects of O2 plasma post-treatment on ZnO: Ga thin films grown by H2O-thermal ALD

Yueh-Lin Lee; Jia-Hao Chuang; Tzu-Hsuan Huang; Chong-Long Ho; Meng-Chyi Wu

doi:10.1117/12.2003029

18 March 2013 Effects of O₂ plasma post-treatment on ZnO: Ga thin films grown by H₂O-thermal ALD

Yueh-Lin Lee, Jia-Hao Chuang, Tzu-Hsuan Huang, Chong-Long Ho, Meng-Chyi Wu

Proceedings Volume 8626, Oxide-based Materials and Devices IV; 86261K (2013) https://doi.org/10.1117/12.2003029
Event: SPIE OPTO, 2013, San Francisco, California, United States

Abstract

Transparent conducting oxides have been widely employed in optoelectronic devices using the various deposition methods such as sputtering, thermal evaporator, and e-gun evaporator technologies.^1-3 In this work, gallium doped zinc oxide (ZnO:Ga) thin films were grown on glass substrates via H₂O-thermal atomic layer deposition (ALD) at different deposition temperatures. ALD-GZO thin films were constituted as a layer-by-layer structure by stacking zinc oxides and gallium oxides. Diethylzinc (DEZ), triethylgallium (TEG) and H₂O were used as zinc, gallium precursors and oxygen source, respectively. Furthermore, we investigated the influences of O₂ plasma post-treatment power on the surface morphology, electrical and optical property of ZnO:Ga films. As the result of O₂ plasma post-treatment, the characteristics of ZnO:Ga films exhibit a smooth surface, low resistivity, high carrier concentration, and high optical transmittance in the visible spectrum. However, the transmittance decreases with O₂ plasma power in the near- and mid-infrared regions.

Citation Download Citation

Yueh-Lin Lee, Jia-Hao Chuang, Tzu-Hsuan Huang, Chong-Long Ho, and Meng-Chyi Wu "Effects of O₂ plasma post-treatment on ZnO: Ga thin films grown by H₂O-thermal ALD", Proc. SPIE 8626, Oxide-based Materials and Devices IV, 86261K (18 March 2013); https://doi.org/10.1117/12.2003029

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