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14 March 2013 Mid-infrared photonics devices in SOI
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Proceedings Volume 8629, Silicon Photonics VIII; 86290J (2013)
Event: SPIE OPTO, 2013, San Francisco, California, United States
In this paper we present silicon photonics devices designed for the 3-4μm wavelength region including waveguides, MMIs, ring resonators and Mach-Zehnder interferometers. The devices are based on silicon on insulator (SOI) platform. We show that 400-500 nm high silicon waveguides can have propagation losses as low as ~ 4 dB/cm at 3.8μm. We also demonstrate MMIs with insertion loss of 0.25 dB, high extinction ratio asymmetric Mach-Zehnder interferometers, and SOI ring resonators. This combined with our previous results reported at 3.4μm confirm that SOI is a viable platform for the 3-4 μm region and that low loss mid-infrared passive devices can be realized on it.
© (2013) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
G. Z. Mashanovich, M. Nedeljkovic, M. M Milošević, Y. Hu, T. M. Ben Masaud, E. Jaberansary, X. Chen, M. Strain, M. Sorel, A. C. Peacock, H. M. H. Chong, and G. T. Reed "Mid-infrared photonics devices in SOI", Proc. SPIE 8629, Silicon Photonics VIII, 86290J (14 March 2013);


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