Short-wave infrared colloidal quantum dot photodetectors on silicon

Chen Hu; Alban Gassenq; Yolanda Justo; Sergii Yakunin; Wolfgang Heiss; Zeger Hens; Gunther Roelkens

doi:10.1117/12.2001246

4 February 2013 Short-wave infrared colloidal quantum dot photodetectors on silicon

Chen Hu, Alban Gassenq, Yolanda Justo, Sergii Yakunin, Wolfgang Heiss, Zeger Hens, Gunther Roelkens

Proceedings Volume 8631, Quantum Sensing and Nanophotonic Devices X; 863127 (2013) https://doi.org/10.1117/12.2001246
Event: SPIE OPTO, 2013, San Francisco, California, United States

Abstract

In this paper, two kinds of colloidal quantum dots, PbS and HgTe, are explored for SWIR photodetectors application. The colloidal dots are prepared by hot injection chemical synthesis, with organic ligands around the dots keeping them stable in solution. For the purpose of achieving efficient carrier transport between the dots in a film, these long organic ligands are replaced by shorter, inorganic ligands. We report uniform, ultra-smooth colloidal QD films without cracks realized by dip-coating and corresponding ligand exchange on a silicon substrate. Metal-free inorganic ligands, such as OH^- and S^2-, are investigated to facilitate the charge carrier transport in the film. Both PbS and HgTe-based quantum dot photoconductors were fabricated on interdigitated gold electrodes. For PbS-based detectors a responsivity of 200A/W is measured at 1.5μm, due to the large internal photoconductive gain. A 2.2μm cut-off wavelength for PbS photodetectors and 2.8μm for HgTe quantum dot photodetectors are obtained.

Citation Download Citation

Chen Hu, Alban Gassenq, Yolanda Justo, Sergii Yakunin, Wolfgang Heiss, Zeger Hens, and Gunther Roelkens "Short-wave infrared colloidal quantum dot photodetectors on silicon", Proc. SPIE 8631, Quantum Sensing and Nanophotonic Devices X, 863127 (4 February 2013); https://doi.org/10.1117/12.2001246

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