Comprehensive anaylsis of GaSb-based mid-infrared vertical-cavity surface-emitting lasers

Z. Q. Li; Z. M. Simon Li

doi:10.1117/12.1000108

13 March 2013 Comprehensive anaylsis of GaSb-based mid-infrared vertical-cavity surface-emitting lasers

Z. Q. Li, Z. M. Simon Li

Proceedings Volume 8639, Vertical-Cavity Surface-Emitting Lasers XVII; 863907 (2013) https://doi.org/10.1117/12.1000108
Event: SPIE OPTO, 2013, San Francisco, California, United States

Abstract

Comprehensive electro-opto and thermal analysis on GaSb-based vertical-cavity surface-emitting lasers (VCSELs) emitting at 2.6μm are presented. The theoretical models include a 2D/3D drift-diffusion equations for carrier transport coupled with the optical model which describes the spontaneous noise as the driving force for lasing. Optical gain is obtained by Fermi’s golden rule and the self-consistent solution of Schrodinger equation. Self- heating effects of the device are also included self-consistently. These results shed light on the internal device physics such as carrier transport, temperature ditribution, optical gain and losses etc. Based on the simulation, we also discuss the areas for future improvements.

Citation Download Citation

Z. Q. Li and Z. M. Simon Li "Comprehensive anaylsis of GaSb-based mid-infrared vertical-cavity surface-emitting lasers", Proc. SPIE 8639, Vertical-Cavity Surface-Emitting Lasers XVII, 863907 (13 March 2013); https://doi.org/10.1117/12.1000108

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