Paper
5 March 2013 High modal gain 1.5 μm InP based quantum dot lasers: dependence of static properties on the active layer design
Vitalii Sichkovskyi, Vitalii Ivanov, Johann Peter Reithmaier
Author Affiliations +
Proceedings Volume 8640, Novel In-Plane Semiconductor Lasers XII; 864004 (2013) https://doi.org/10.1117/12.2002420
Event: SPIE OPTO, 2013, San Francisco, California, United States
Abstract
Based on a novel quantum dot (QD) growth technique, high density dot-like QDs were grown on (100)InAlGaAs/InP surfaces, which resulted in a strongly improved modal gain in 1.55 μm QD lasers. The influence of the number of QD layers on static properties, e.g., modal gain, threshold current density and spectral properties, are presented and discussed. For a large number of QD layers, e.g., 6 QD layers, a high modal gain of > 70cm-1 could be obtained. By reducing the number of QD layers, i.e., lowering the modal gain, the wavelength shift with temperature can be reduced to < 0.2 nm/K. Systematic dependence of laser properties on structural parameters is observed.
© (2013) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Vitalii Sichkovskyi, Vitalii Ivanov, and Johann Peter Reithmaier "High modal gain 1.5 μm InP based quantum dot lasers: dependence of static properties on the active layer design", Proc. SPIE 8640, Novel In-Plane Semiconductor Lasers XII, 864004 (5 March 2013); https://doi.org/10.1117/12.2002420
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Cited by 2 scholarly publications.
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KEYWORDS
Laser damage threshold

Quantum dots

Indium arsenide

Quantum dot lasers

Absorption

Semiconductor lasers

Solids

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