128 X 64 Element Schottky Barrier IR-CCD Focal Plane Array

J von der Ohe; J Siebeneck; U Suckow; M Koniger; W Platz; L Senatori

doi:10.1117/12.943548

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3 May 1988 128 X 64 Element Schottky Barrier IR-CCD Focal Plane Array

J von der Ohe, J Siebeneck, U Suckow, M Koniger, W Platz, L Senatori

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Proceedings Volume 0865, Focal Plane Arrays: Technology and Applications; (1988) https://doi.org/10.1117/12.943548
Event: 1987 Symposium on the Technologies for Optoelectronics, 1987, Cannes, France

Abstract

A Schottky barrier IR-CCD focal plane array with 128 x 64 picture elements was developed. The device utilizes n-channel CCD shift registers with an interline transfer format. To achieve high photoresponse the Schottky barrier detectors are constructed with a thin layer of PtSi separated from an aluminum mirror by a layer of Si3N4. The thickness of the Si₃N₄ layer is adapted to the wavelength of about 4/μm. The device is illuminated from the backside. The focal plane arrays show an excellent homogeneity of the responsivity. Quantum efficiencies of several percent are achieved. The black body (500K) detectivity of the devices is in the order of 1-2.1011 cm W-1 sec-1/2 measured with a cooled filter in the wavelength range 3.3 - 3.5/μm. With this device a camera system has been built to demonstrate the possibilities for thermal imaging with PtSi-Schottky barrier detectors. The output signal from the on-chip amplifier is processed with the double correlated sampling method and subsequent 12 bit A/D-conversion. A pixel-by-pixel offset correction is applied. Examples of thermal images taken with this camera system will be presented.

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J von der Ohe, J Siebeneck, U Suckow, M Koniger, W Platz, and L Senatori "128 X 64 Element Schottky Barrier IR-CCD Focal Plane Array", Proc. SPIE 0865, Focal Plane Arrays: Technology and Applications, (3 May 1988); https://doi.org/10.1117/12.943548

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