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3 May 1988 Field-Effect Transistors For Efficient Integrated Optoelectronic Sensors
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Proceedings Volume 0865, Focal Plane Arrays: Technology and Applications; (1988) https://doi.org/10.1117/12.943542
Event: 1987 Symposium on the Technologies for Optoelectronics, 1987, Cannes, France
Abstract
Integrated receivers associating an amplifier with a photodiode are studied. The field effect transistor used for the amplifier has been designed and characterized. The FET tran-sistor has been fabricated on a GaAs semi-insulating substrate using Liquid Phase Epitaxy. The structure consists of two epitaxial layers, i.e. one N-GaAs layer for the channel and a P-GaAlAs layer for the gate. The design, technological process and current-voltage characteristics are described. Transconductance values over 10 mA/V have been achieved and the transistor have shown a threshold voltage of -4.6 volts. Integrated receivers whose field effect transistor is associated with a photodiode, enhance the detector sensitivity. The results measured on the device show current gain of 15 with a photodiode load resistance set to 2 kSt... Optical sensitivity and current amplification better than 15 are found on transistors with a high doping level ND. The results shown by the FET will be applied to a type of sensor presenting static optical responsivity.
© (1988) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
F Therez, M Fallahi, R Leguerre, D Esteve, and D Kendil "Field-Effect Transistors For Efficient Integrated Optoelectronic Sensors", Proc. SPIE 0865, Focal Plane Arrays: Technology and Applications, (3 May 1988); https://doi.org/10.1117/12.943542
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