Fundamental performance differences of CMOS and CCD imagers: part V

James R. Janesick; Tom Elliott; James Andrews; John Tower; Jeff Pinter

doi:10.1117/12.2008268

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19 February 2013 Fundamental performance differences of CMOS and CCD imagers: part V

James R. Janesick, Tom Elliott, James Andrews, John Tower, Jeff Pinter

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Proceedings Volume 8659, Sensors, Cameras, and Systems for Industrial and Scientific Applications XIV; 865902 (2013) https://doi.org/10.1117/12.2008268
Event: IS&T/SPIE Electronic Imaging, 2013, Burlingame, California, United States

Abstract

Previous papers delivered over the last decade have documented developmental progress made on large pixel scientific CMOS imagers that match or surpass CCD performance. New data and discussions presented in this paper include: 1) a new buried channel CCD fabricated on a CMOS process line, 2) new data products generated by high performance custom scientific CMOS 4T/5T/6T PPD pixel imagers, 3) ultimate CTE and speed limits for large pixel CMOS imagers, 4) fabrication and test results of a flight 4k x 4k CMOS imager for NRL’s SoloHi Solar Orbiter Mission, 5) a progress report on ultra large stitched Mk x Nk CMOS imager, 6) data generated by on-chip sub-electron CDS signal chain circuitry used in our imagers, 7) CMOS and CMOSCCD proton and electron radiation damage data for dose levels up to 10 Mrd, 8) discussions and data for a new class of PMOS pixel CMOS imagers and 9) future CMOS development work planned.

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James R. Janesick, Tom Elliott, James Andrews, John Tower, and Jeff Pinter "Fundamental performance differences of CMOS and CCD imagers: part V ", Proc. SPIE 8659, Sensors, Cameras, and Systems for Industrial and Scientific Applications XIV, 865902 (19 February 2013); https://doi.org/10.1117/12.2008268

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