Metal Organic Chemical Vapor Deposition (MOCVD) Growth Of Ga1-XInxAsySb1-y : First Electrical And Optical Characterization Of Materials And Devices

Georges Bougnot; Frederique Delannoy; Fabien Pascal; Fabien Roumanille; Alain Foucaran; Philippe Grosse; Josiane Bougnot; Leone Gouskov

doi:10.1117/12.943586

1 January 1987 Metal Organic Chemical Vapor Deposition (MOCVD) Growth Of Ga1-XInxAsySb1-y : First Electrical And Optical Characterization Of Materials And Devices

Georges Bougnot, Frederique Delannoy, Fabien Pascal, Fabien Roumanille, Alain Foucaran, Philippe Grosse, Josiane Bougnot, Leone Gouskov

Author Affiliations +

Proceedings Volume 0866, Materials and Technologies for Optical Communications; (1987) https://doi.org/10.1117/12.943586
Event: 1987 Symposium on the Technologies for Optoelectronics, 1987, Cannes, France

Abstract

Gal-xInxAsySb1-y epitaxial layers were grown by atmospheric pressure metal organic chemical vapor deposition (MOCVD) on (100) GaSb substrates with a wide range of x and y values. Layer morphology evolution versus growth conditions is described. First results on I-V, C-V and spectral response of GaInAsSb/GaSb heterojunctions are promising for 2.5 μm photodetection.

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Georges Bougnot, Frederique Delannoy, Fabien Pascal, Fabien Roumanille, Alain Foucaran, Philippe Grosse, Josiane Bougnot, and Leone Gouskov "Metal Organic Chemical Vapor Deposition (MOCVD) Growth Of Ga1-XInxAsySb1-y : First Electrical And Optical Characterization Of Materials And Devices", Proc. SPIE 0866, Materials and Technologies for Optical Communications, (1 January 1987); https://doi.org/10.1117/12.943586

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