Paper
1 April 2013 Oxide nanoparticle EUV resists: toward understanding the mechanism of positive and negative tone patterning
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Abstract
DUV, EUV and e-beam patterning of hybrid nanoparticle photoresists have been reported previously by Ober and coworkers. The present work explores the underlying mechanism that is responsible for the dual tone patterning capability of these photoresist materials. Spectroscopic results correlated with mass loss and dissolution studies suggest a ligand exchange mechanism responsible for altering the solubility between the exposed and unexposed regions.
© (2013) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Souvik Chakrabarty, Christine Ouyang, Marie Krysak, Markos Trikeriotis, Kyoungyoung Cho, Emmanuel P. Giannelis, and Christopher K. Ober "Oxide nanoparticle EUV resists: toward understanding the mechanism of positive and negative tone patterning", Proc. SPIE 8679, Extreme Ultraviolet (EUV) Lithography IV, 867906 (1 April 2013); https://doi.org/10.1117/12.2011490
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Cited by 19 scholarly publications and 1 patent.
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KEYWORDS
Nanoparticles

Photoresist materials

Electron beam lithography

Oxides

Ions

Spectroscopy

Extreme ultraviolet lithography

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