Paper
1 April 2013 Effect of leaving group design on EUV lithography performance
Owendi Ongayi, Vipul Jain, Suzanne M. Coley, David Valeri, Amy Kwok, Dung Quach, Mike Wagner, Jim Cameron, Jim Thackeray
Author Affiliations +
Abstract
In this paper, we will describe some of our efforts on various leaving group designs and their impacts on resist performance, mainly focusing on the leaving group polarity, activation energy and molecular volume. The EUV lithographic performances of the newly designed leaving groups are evaluated on a standard methacrylate polymer bound photoacid generator (PBP) platform. With our low activation energy and hydrophobic leaving group PBP, we report good line and space and contact hole performance using the Albany eMET and LBNL BMET tool.
© (2013) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Owendi Ongayi, Vipul Jain, Suzanne M. Coley, David Valeri, Amy Kwok, Dung Quach, Mike Wagner, Jim Cameron, and Jim Thackeray "Effect of leaving group design on EUV lithography performance", Proc. SPIE 8679, Extreme Ultraviolet (EUV) Lithography IV, 867907 (1 April 2013); https://doi.org/10.1117/12.2011600
Lens.org Logo
CITATIONS
Cited by 5 scholarly publications.
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Polymers

Extreme ultraviolet lithography

Extreme ultraviolet

Photoresist materials

Lithography

Radiation effects

Neodymium

Back to Top