LPP-EUV light source development for high volume manufacturing lithography

Hakaru Mizoguchi; Hiroaki Nakarai; Tamotsu Abe; Takeshi Ohta; Krzysztof M. Nowak; Yasufumi Kawasuji; Hiroshi Tanaka; Yukio Watanabe; Tsukasa Hori; Takeshi Kodama; Yutaka Shiraishi; Tatsuya Yanagida; Tsuyoshi Yamada; Taku Yamazaki; Shinji Okazaki; Takashi Saitou

doi:10.1117/12.2014139

8 April 2013 LPP-EUV light source development for high volume manufacturing lithography

Hakaru Mizoguchi, Hiroaki Nakarai, Tamotsu Abe, Takeshi Ohta, Krzysztof M. Nowak, Yasufumi Kawasuji, Hiroshi Tanaka, Yukio Watanabe, Tsukasa Hori, Takeshi Kodama, Yutaka Shiraishi, Tatsuya Yanagida, Tsuyoshi Yamada, Taku Yamazaki, Shinji Okazaki, Takashi Saitou

Author Affiliations +

Proceedings Volume 8679, Extreme Ultraviolet (EUV) Lithography IV; 86790A (2013) https://doi.org/10.1117/12.2014139
Event: SPIE Advanced Lithography, 2013, San Jose, California, United States

Abstract

Since 2002, we have been developing a CO₂-Sn-LPP EUV light source, the most promising solution as the 13.5 nm high power (>200 W) light source for HVM EUV lithography. Because of its high efficiency, power scalability and spatial freedom around plasma, we believe that the CO₂-Sn-LPP scheme is the most feasible candidate as the light source for EUVL. By now, our group has proposed several unique original technologies such as CO₂ laser driven Sn plasma generation, double laser pulse shooting for higher Sn ionization rate and higher CE, Sn debris mitigation with a magnetic field, and a hybrid CO₂ laser system that is a combination of a short pulse oscillator and commercial cw-CO₂ amplifiers. The theoretical and experimental data have clearly demonstrated the advantage of combining a laser beam at a wavelength of the CO₂ laser system with Sn plasma to achieve high CE from driver laser pulse energy to EUV in-band energy. Combination of CO2 laser power and droplet generator improvements on new EUV chamber (Proto-2) enables stable EUV emission. EUV burst operation data shows stable average 10.2W(clean power @ I/F) EUV emission and maximum 20.3W(clean power @ I/F) was demonstrated. For future HVM the maximum of 4.7% CE with a 20 μm droplet are demonstrated by ps pre-pulse LPP. Also reported 40kW CO2 laser development project cooperate with Mitsubishi electric.

Citation Download Citation

Hakaru Mizoguchi, Hiroaki Nakarai, Tamotsu Abe, Takeshi Ohta, Krzysztof M. Nowak, Yasufumi Kawasuji, Hiroshi Tanaka, Yukio Watanabe, Tsukasa Hori, Takeshi Kodama, Yutaka Shiraishi, Tatsuya Yanagida, Tsuyoshi Yamada, Taku Yamazaki, Shinji Okazaki, and Takashi Saitou "LPP-EUV light source development for high volume manufacturing lithography", Proc. SPIE 8679, Extreme Ultraviolet (EUV) Lithography IV, 86790A (8 April 2013); https://doi.org/10.1117/12.2014139

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available