The performance of EUV resists is one of the main challenges for the cost-effectiveness and the introduction of EUV
lithography into high-volume manufacturing. The EUV interference lithography (EUV-IL) is a simple and powerful
technique to print periodic nanostructures with a resolution beyond the capabilities of other tools. In addition, the well-defined and pitch-independent aerial image of the EUV-IL provides further advantages for the analysis of resist
performance. In this paper, we present evaluation of chemically-amplified resists (CAR) and inorganic resists using
EUV-IL. We illustrate the performance of the tool through a reproducibility study of a baseline resist over the course of
16 months. A comparative study of the performance of different resists is presented with the aim of resolving patterns
with CARs for 16 nm half-pitch (HP) and 11 nm HP. Critical dimension (CD) and line-edge roughness (LER) are evaluated as functions of dose for different process conditions. With a CAR with about 10 mJ/cm2 sensitivity, 18 nm L/S patterns are obtained with low LER and well-resolved patterns are achieved down to 16 nm HP. With another CAR of about 35 mJ/cm2 sensitivity, L/S patterns with low LER are demonstrated down to 14 nm HP. Resolved patterns are achieved down to 12 HP, demonstrating the capability of its potential towards 11 nm HP if pattern collapse mitigation can be successfully applied. With EUV-sensitive inorganic resists, patterning down to 8 nm has been realized. In summary, we show that resist platforms with reasonable sensitivities are already available for patterning at 16 nm HP, 11 nm HP, and beyond, although there is still significant progress is needed. We also show that with decreasing HP, pattern collapse becomes a crucial issue limiting the resolution and LER. Therefore resist stability, collapse mitigation, and etch resistance are some of the significant problems to be addressed in the development of resist platforms for future technology nodes.