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1 April 2013 Evaluation of novel projection electron microscopy (PEM) optics for EUV mask inspection
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In order to achieve inspection sensitivity and a attainability for 1× node, a projection electron microscopy (PEM) system is employed that enables us to do high-speed/ high-resolution inspection that is not possible with the conventional DUV and EB inspection systems. By selecting a higher electron energy in imaging using Electron Optics (EO) exposure, and by applying a newly designed model to the basic PEM optics model, we have minimized the aberration in imaging that occurs when working with EO; and we have improved the related transmittance of such a system. The experimental result by showing designs for the improved transmittance, is obtained by making electron throughput measurement.
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Ryoichi Hirano, Susumu Iida, Tsuyoshi Amano, Tsuneo Terasawa, Hidehiro Watanabe, and Kenji Terao "Evaluation of novel projection electron microscopy (PEM) optics for EUV mask inspection", Proc. SPIE 8679, Extreme Ultraviolet (EUV) Lithography IV, 86791T (1 April 2013);

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