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1 April 2013 Laser produced plasma EUV light source for EUVL patterning at 20nm node and beyond
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Abstract
This paper describes the development of a laser-produced-plasma (LPP) extreme-ultraviolet (EUV) source for advanced lithography applications in high volume manufacturing. EUV lithography is expected to succeed 193nm immersion double patterning technology for sub-20nm critical layer patterning. In this paper we discuss the most recent results from high power testing on our development systems in San Diego, and describe the requirements and technical challenges related to successful implementation of these technologies. Subsystem performance will be shown including the CO2 drive laser, droplet generation, laser-to-droplet targeting control, intermediate-focus (IF) metrology, out-of-band (OOB) radiation measurements and system use and experience. In addition, a multitude of smaller lab-scale experimental systems have also been constructed and tested..
© (2013) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Igor V. Fomenkov, David C. Brandt, Nigel R. Farrar, Bruno La Fontaine, Norbert R. Böwering, Daniel J. Brown, Alex I. Ershov, and David W. Myers "Laser produced plasma EUV light source for EUVL patterning at 20nm node and beyond", Proc. SPIE 8679, Extreme Ultraviolet (EUV) Lithography IV, 86792I (1 April 2013); https://doi.org/10.1117/12.2012695
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