DSA hole defectivity analysis using advanced optical inspection tool

Ryota Harukawa; Masami Aoki; Andrew Cross; Venkat Nagaswami; Tadatoshi Tomita; Seiji Nagahara; Makoto Muramatsu; Shinichiro Kawakami; Hitoshi Kosugi; Benjamen Rathsack; Takahiro Kitano; Jason Sweis; Ali Mokhberi

doi:10.1117/12.2011177

18 April 2013 DSA hole defectivity analysis using advanced optical inspection tool

Ryota Harukawa, Masami Aoki, Andrew Cross, Venkat Nagaswami, Tadatoshi Tomita, Seiji Nagahara, Makoto Muramatsu, Shinichiro Kawakami, Hitoshi Kosugi, Benjamen Rathsack, Takahiro Kitano, Jason Sweis, Ali Mokhberi

Author Affiliations +

Proceedings Volume 8681, Metrology, Inspection, and Process Control for Microlithography XXVII; 86811A (2013) https://doi.org/10.1117/12.2011177
Event: SPIE Advanced Lithography, 2013, San Jose, California, United States

Abstract

This paper discusses the defect density detection and analysis methodology using advanced optical wafer inspection capability to enable accelerated development of a DSA process/process tools and the required inspection capability to monitor such a process. The defectivity inspection methodologies are optimized for grapho epitaxy directed self-assembly (DSA) contact holes with 25 nm sizes. A defect test reticle with programmed defects on guide patterns is designed for improved optimization of defectivity monitoring. Using this reticle, resist guide holes with a variety of sizes and shapes are patterned using an ArF immersion scanner. The negative tone development (NTD) type thermally stable resist guide is used for DSA of a polystyrene-b-poly(methyl methacrylate) (PS-b-PMMA) block copolymer (BCP). Using a variety of defects intentionally made by changing guide pattern sizes, the detection rates of each specific defectivity type has been analyzed. It is found in this work that to maximize sensitivity, a two pass scan with bright field (BF) and dark field (DF) modes provides the best overall defect type coverage and sensitivity. The performance of the two pass scan with BF and DF modes is also revealed by defect analysis for baseline defectivity on a wafer processed with nominal process conditions.

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Ryota Harukawa, Masami Aoki, Andrew Cross, Venkat Nagaswami, Tadatoshi Tomita, Seiji Nagahara, Makoto Muramatsu, Shinichiro Kawakami, Hitoshi Kosugi, Benjamen Rathsack, Takahiro Kitano, Jason Sweis, and Ali Mokhberi "DSA hole defectivity analysis using advanced optical inspection tool", Proc. SPIE 8681, Metrology, Inspection, and Process Control for Microlithography XXVII, 86811A (18 April 2013); https://doi.org/10.1117/12.2011177

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