Gaps analysis for CD metrology beyond the 22nm node

Benjamin Bunday; Thomas A. Germer; Victor Vartanian; Aaron Cordes; Aron Cepler; Charles Settens

doi:10.1117/12.2012472

10 April 2013 Gaps analysis for CD metrology beyond the 22nm node

Benjamin Bunday, Thomas A. Germer, Victor Vartanian, Aaron Cordes, Aron Cepler, Charles Settens

Proceedings Volume 8681, Metrology, Inspection, and Process Control for Microlithography XXVII; 86813B (2013) https://doi.org/10.1117/12.2012472
Event: SPIE Advanced Lithography, 2013, San Jose, California, United States

Abstract

This paper will examine the future for critical dimension (CD) metrology. First, we will present the extensive list of applications for which CD metrology solutions are needed, showing commonalities and differences among the various applications. We will then report on the expected technical limits of the metrology solutions currently being investigated by SEMATECH and others in the industry to address the metrology challenges of future nodes, including conventional CD scanning electron microscopy (CD-SEM) and optical critical dimension (OCD) metrology and new potential solutions such as He-ion microscopy (HeIM, sometimes elsewhere referred to as HIM), CD atomic force microscopy (CD-AFM), CD small-angle x-ray scattering (CD-SAXS), high-voltage scanning electron microscopy (HV-SEM), and other types. A technical gap analysis matrix will then be demonstrated, showing the current state of understanding of the future of the CD metrology space.

Citation Download Citation

Benjamin Bunday, Thomas A. Germer, Victor Vartanian, Aaron Cordes, Aron Cepler, and Charles Settens "Gaps analysis for CD metrology beyond the 22nm node", Proc. SPIE 8681, Metrology, Inspection, and Process Control for Microlithography XXVII, 86813B (10 April 2013); https://doi.org/10.1117/12.2012472

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