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29 March 2013 Optimization of a virtual EUV photoresist for the trade-off between throughput and CDU
Mark D. Smith, John Biafore, Chao Fang
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Proceedings Volume 8682, Advances in Resist Materials and Processing Technology XXX; 868203 (2013) https://doi.org/10.1117/12.2011701
Event: SPIE Advanced Lithography, 2013, San Jose, California, United States
Abstract
EUV source power and resist photospeed will dictate the throughput of EUV lithography, and throughput is a key factor in the cost of ownership of EUVL as a technology. However, low exposure doses typically lead to poor CD uniformity (CDU) and line-width roughness (LWR). In this paper, we simulate the CDU versus dose-to-size trade-off for a large number of virtual photoresists using PROLITH for 28nm, 26nm, and 22nm HP contacts. The resulting CDU versus dose curve is very similar to the experimental investigations by Naulleau et al. (Proc. SPIE, v7972, 2011) and by Goethals et al. (EUVL Symposium 2012). With the simulated results, we can investigate trends with physical properties such as diffusivity of acid and quencher, and overall exposure yield, as well as formulation properties such as PAG and quencher loadings, and conventional versus photodecomposable quencher.
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Mark D. Smith, John Biafore, and Chao Fang "Optimization of a virtual EUV photoresist for the trade-off between throughput and CDU", Proc. SPIE 8682, Advances in Resist Materials and Processing Technology XXX, 868203 (29 March 2013); https://doi.org/10.1117/12.2011701
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Cited by 16 scholarly publications and 1 patent.
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KEYWORDS
Photons
Photoresist materials
Extreme ultraviolet lithography
Quenching (fluorescence)
Diffusion
Electrons
Extreme ultraviolet
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