Paper
29 March 2013 Combining physical resist modeling and self-consistent field theory for pattern simulation in directed self-assembly
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Abstract
In this presentation, we describe multi-scale modeling method combining PROLITH lithography simulation with Self-Consistent Field Theory (SCFT) computation of the block copolymer Directed Self-Assembly (DSA). Within this method, we utilize PROLITH to predict the shape of a lithographic feature as function of process conditions. The results of that calculation are then used as input into SCFT simulation to predict the distribution of the matrix and etchable blocks of the DSA polymers (such as PS-b-PDMS or PS-b- PMMA) inside that feature. This method is applied to simple cases (e.g., rectangular trench and cylindrical contact hole), and the self-assembly of various polymers is investigated as a function of their compositions. The new tool could therefore be applied to rapidly design and screen lithographic process conditions together with polymers used to shrink or rectify the features within the DSA technology.
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Michael Reilly, Valeriy Ginzburg, and Mark D. Smith "Combining physical resist modeling and self-consistent field theory for pattern simulation in directed self-assembly", Proc. SPIE 8682, Advances in Resist Materials and Processing Technology XXX, 86820G (29 March 2013); https://doi.org/10.1117/12.2011639
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Cited by 5 scholarly publications.
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KEYWORDS
Directed self assembly

Polymers

Lithography

Computer simulations

Polymethylmethacrylate

Photoresist materials

Photoresist processing

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