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29 March 2013 Sub-20nm lithography negative tone chemically amplified resists using cross-linker additives
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Here, we report the highest recorded resolution for a negative-tone, carbon-based, chemically amplified (CA) resist of 20 nm half-pitch (HP) using both E-beam and EUV exposure systems. The new chemistry incorporates variable amounts of oxetane (0, 5, 10 and 20%) cross-linker into a base of Noria-MAd (methyl-admantane) molecular resist. Cross-linkable resists showed simultaneous improvements in surface energy, structural integrity, and swelling to ensure collapse free 20nm HP patterns and line-edge roughness (LER) down to 2.3 nm. EUV exposed Noria-Ox (5%) cross-linked resist patterns demonstrated 5 times improvement in Z-factor (for 24 nm HP) over Noria-MAd alone.
© (2013) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Prashant K. Kulshreshtha, Ken Maruyama, Sara Kiani, Scott Dhuey, Pradeep Perera, James Blackwell, Deirdre Olynick, and Paul D. Ashby "Sub-20nm lithography negative tone chemically amplified resists using cross-linker additives", Proc. SPIE 8682, Advances in Resist Materials and Processing Technology XXX, 86820N (29 March 2013);

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