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29 March 2013 Sub-20nm lithography negative tone chemically amplified resists using cross-linker additives
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Abstract
Here, we report the highest recorded resolution for a negative-tone, carbon-based, chemically amplified (CA) resist of 20 nm half-pitch (HP) using both E-beam and EUV exposure systems. The new chemistry incorporates variable amounts of oxetane (0, 5, 10 and 20%) cross-linker into a base of Noria-MAd (methyl-admantane) molecular resist. Cross-linkable resists showed simultaneous improvements in surface energy, structural integrity, and swelling to ensure collapse free 20nm HP patterns and line-edge roughness (LER) down to 2.3 nm. EUV exposed Noria-Ox (5%) cross-linked resist patterns demonstrated 5 times improvement in Z-factor (for 24 nm HP) over Noria-MAd alone.
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Prashant K. Kulshreshtha, Ken Maruyama, Sara Kiani, Scott Dhuey, Pradeep Perera, James Blackwell, Deirdre Olynick, and Paul D. Ashby "Sub-20nm lithography negative tone chemically amplified resists using cross-linker additives", Proc. SPIE 8682, Advances in Resist Materials and Processing Technology XXX, 86820N (29 March 2013); https://doi.org/10.1117/12.2011640
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