Investigation of trench and contact hole shrink mechanism in the negative tone develop process

Sohan Singh Mehta; Craig Higgins; Vikrant Chauhan; Shyam Pal; Hui Peng Koh; Jean Raymond Fakhoury; Shaowen Gao; Lokesh Subramany; Salman Iqbal; Bumhwan Jeon; Pedro Morrison; Chris Karanikas; Yayi Wei; David R. Cho

doi:10.1117/12.2012331

29 March 2013 Investigation of trench and contact hole shrink mechanism in the negative tone develop process

Sohan Singh Mehta, Craig Higgins, Vikrant Chauhan, Shyam Pal, Hui Peng Koh, Jean Raymond Fakhoury, Shaowen Gao, Lokesh Subramany, Salman Iqbal, Bumhwan Jeon, Pedro Morrison, Chris Karanikas, Yayi Wei, David R. Cho

Author Affiliations +

Proceedings Volume 8682, Advances in Resist Materials and Processing Technology XXX; 86820O (2013) https://doi.org/10.1117/12.2012331
Event: SPIE Advanced Lithography, 2013, San Jose, California, United States

Abstract

The objective of this work was to study the trench and contact hole shrink mechanism in negative tone develop resist processes and its manufacturability challenges associated for 20nm technology nodes and beyond. Process delay from post-exposure to develop, or “queue time”, is studied in detail. The impact of time link delay on resolved critical dimension (CD) is fully characterized for patterned resist and etched geometries as a function of various process changes. In this study, we assembled a detailed, theoretical model and performed experimental work to correlated time link delay to acid diffusion within the resist polymer matrix. Acid diffusion is determined using both a modulation transfer function for diffusion and simple approximation based on Fick’s law of diffusion.

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Sohan Singh Mehta, Craig Higgins, Vikrant Chauhan, Shyam Pal, Hui Peng Koh, Jean Raymond Fakhoury, Shaowen Gao, Lokesh Subramany, Salman Iqbal, Bumhwan Jeon, Pedro Morrison, Chris Karanikas, Yayi Wei, and David R. Cho "Investigation of trench and contact hole shrink mechanism in the negative tone develop process", Proc. SPIE 8682, Advances in Resist Materials and Processing Technology XXX, 86820O (29 March 2013); https://doi.org/10.1117/12.2012331

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