Calculating development parameters for chemically amplified resists by the film-reducing method

Atsushi Sekiguchi; Yoshihisa Sensu

doi:10.1117/12.2008791

29 March 2013 Calculating development parameters for chemically amplified resists by the film-reducing method

Atsushi Sekiguchi, Yoshihisa Sensu

Proceedings Volume 8682, Advances in Resist Materials and Processing Technology XXX; 86821K (2013) https://doi.org/10.1117/12.2008791
Event: SPIE Advanced Lithography, 2013, San Jose, California, United States

Abstract

We obtained development parameters for a chemically amplified resist from calculations involving the conversion of the relationship between exposure dose and development rate to the relationship between protection ratio and development rate using the conventional ABC parameter^[1] and development rate data (RDA data) ^[2]. However, calculations by this method require the ABC parameter. Since chemically amplified resists have no bleaching effect, the C parameter must be measured by the FT-IR ^[3-5] or coumarin addition method ^[6-8]. Given this constraint, we examined the method of obtaining development parameters based on the film reduction observed in the resist exposed or the film reduction observed after PEB, without using the ABC parameter. This paper presents the results.

Citation Download Citation

Atsushi Sekiguchi and Yoshihisa Sensu "Calculating development parameters for chemically amplified resists by the film-reducing method", Proc. SPIE 8682, Advances in Resist Materials and Processing Technology XXX, 86821K (29 March 2013); https://doi.org/10.1117/12.2008791

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