Electron dose reduction through improved adhesion by cationic organic material with HSQ resist on an InGaAs multilayer system on GaAs substrate

Wilfried Erfurth; Andrew Thompson; Nezih Ünal

doi:10.1117/12.2018121

29 March 2013 Electron dose reduction through improved adhesion by cationic organic material with HSQ resist on an InGaAs multilayer system on GaAs substrate

Wilfried Erfurth, Andrew Thompson, Nezih Ünal

Author Affiliations +

Proceedings Volume 8682, Advances in Resist Materials and Processing Technology XXX; 86821Z (2013) https://doi.org/10.1117/12.2018121
Event: SPIE Advanced Lithography, 2013, San Jose, California, United States

Abstract

This paper presents the findings of a cationic surface active agent used to promote adhesion on an InGaAs multilayer system on GaAs. The improved adhesion of the HSQ resist allowed the electron exposure dose to be reduced by a factor of four, and enabled the production of features sizes down to 30nm. Moreover, the process latitude is greatly increased for both small and large lithographic features.

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Wilfried Erfurth, Andrew Thompson, and Nezih Ünal "Electron dose reduction through improved adhesion by cationic organic material with HSQ resist on an InGaAs multilayer system on GaAs substrate", Proc. SPIE 8682, Advances in Resist Materials and Processing Technology XXX, 86821Z (29 March 2013); https://doi.org/10.1117/12.2018121

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