High chi polymer development for DSA applications using RAFT technology

Michael T. Sheehan; William B. Farnham; Hoang V. Tran; J. David Londono; Yefim Brun

doi:10.1117/12.2018255

29 March 2013 High chi polymer development for DSA applications using RAFT technology

Michael T. Sheehan, William B. Farnham, Hoang V. Tran, J. David Londono, Yefim Brun

Proceedings Volume 8682, Advances in Resist Materials and Processing Technology XXX; 868225 (2013) https://doi.org/10.1117/12.2018255
Event: SPIE Advanced Lithography, 2013, San Jose, California, United States

Abstract

Directed self-assembly (DSA) of block copolymers is proving to be an interesting and innovative method to make three-dimensional periodic, uniform patterns useful in a variety of microelectronics applications. Attributes critical to acceptable DSA performance of block copolymers include molecular weight uniformity, final purity, and reproducibility in all the steps involved in producing the polymers. Reversible Addition Fragmentation Chain Transfer (RAFT) polymerization technology enables the production of such materials provided that careful process monitoring and compositional homogeneity measurement systems are employed. It is uniquely suited to construction of multiblocks with components of widely divergent surface energies and functionality. We describe a high chi diblock system comprising partially fluorinated methacrylates and substituted styrenics. While special new polymer separation strategies involving controlled polymer particle assembly in liquid media are required for some monomer systems and molecular weight regimes, we have been able to demonstrate high yield and compositionally homogeneous diblocks of lamellar and cylindrical morphology with polydispersities < 1.1. During purification processes, these diblock materials undergo assembly processes in liquid media, and with appropriate controls, this allows for removal of soluble homopolymer contaminants. SAXS analyses of solid polymer samples provide estimates of lamellar d-spacing, and a good correlation with molecular weight is shown. This system will be described.

Citation Download Citation

Michael T. Sheehan, William B. Farnham, Hoang V. Tran, J. David Londono, and Yefim Brun "High chi polymer development for DSA applications using RAFT technology", Proc. SPIE 8682, Advances in Resist Materials and Processing Technology XXX, 868225 (29 March 2013); https://doi.org/10.1117/12.2018255

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