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12 April 2013 Model-based stitching and inter-mask bridge prevention for double patterning lithography
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As EUV Lithography is not ready yet for sub-20nm node manufacturing, ArF immersion lithography must extend its capability. Among various double patterning techniques already explored, Litho-Etch-Litho-Etch (LELE) is one of the main streams considered today to continue scaling at 20nm and below. Our paper presents an application of a new OPC algorithm designed to ensure a successful double patterning process at 20nm node. A novel OPC technique was applied to 20nm contact and M1 layers. It is intended for both double and multi-patterning lithography technologies providing model based capability for concurrent correction of the split layouts ensuring a robust stitching overlap of the cut features and preventing inter-mask bridging. We have also developed an OPC verification methodology for DP failures due to dose, focus, mask and overlay errors. One of the most critical challenges of DP technology is: ensuring sufficient stitching of the cut design shapes and preventing a risk of inter-mask shape bridging. This problem is rapidly exacerbated by the overlay error. It is demonstrated that the new OPC algorithm results in enhanced stitching overlap and a good space control between inter-mask shapes, thus, minimizing DP process implications on circuit reliability.
© (2013) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Guillaume Landié, Jean-Noel Pena, Serguey Postnikov, James Word, Shumay Shang, Fahd Chaoui, Emek Yesilada, and Catherine Martinelli "Model-based stitching and inter-mask bridge prevention for double patterning lithography", Proc. SPIE 8683, Optical Microlithography XXVI, 868316 (12 April 2013);

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