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19 April 2013 Large-area graphene-based thin films using rapid reduction of graphene-oxide
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In the present study, we propose a method to fabricate large-area graphene-based thin films using rapid low temperature reduction of graphene-oxide. Large area (~17.5 graphene oxide (GO) thin films are fabricated by vacuum filtration of GO solution synthesized by the modified Hummers' method. The graphene-oxide thin films are reduced in a MTS testing machine equipped with a controlled atmosphere furnace. Reduction is carried out at temperatures from 200 °C to 400 °C, for different time durations. The fabricated reduced GO thin films are characterized using powder x-ray diffraction and energy-dispersive x-ray spectroscopy. The reduced graphene oxide thin films show decreased interlayer spacing and higher carbon-to-oxygen ratio. Conductivity measurements show an increase in conductivity by over _ve orders of magnitude compared to GO. This method offers a scalable new way of fabricating conductive large-area graphene-based thin films.
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Gautam Naik, Adarsh Kaniyoor, Sundara Ramaprabhu, and Sridhar Krishnaswamy "Large-area graphene-based thin films using rapid reduction of graphene-oxide", Proc. SPIE 8692, Sensors and Smart Structures Technologies for Civil, Mechanical, and Aerospace Systems 2013, 86921C (19 April 2013);

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