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28 June 2013 Modeling of resist surface charging effect on EBM-8000 and its comparison with EBM-6000
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Proceedings Volume 8701, Photomask and Next-Generation Lithography Mask Technology XX; 870102 (2013) https://doi.org/10.1117/12.2030095
Event: Photomask and NGL Mask Technology XX, 2013, Yokohama, Japan
Abstract
In this paper, we report our modeling results of the resist surface charging effect on our newer e-beam mask writer EBM-8000. We show that our fundamental modeling scheme we have developed for EBM-6000 can be adapted on EBM-8000 platform without major modifications. We also discuss the significant differences in the charging effect between EBM-6000 and EBM-8000 in terms of its amplitude, its spatial distribution, and its dependency on the pattern density.
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Noriaki Nakayamada, Takashi Kamikubo, Hirohito Anze, and Munehiro Ogasawara "Modeling of resist surface charging effect on EBM-8000 and its comparison with EBM-6000", Proc. SPIE 8701, Photomask and Next-Generation Lithography Mask Technology XX, 870102 (28 June 2013); https://doi.org/10.1117/12.2030095
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