Megasonic cleaning: effect of dissolved gas properties on cleaning

Hrishi Shende; Sherjang Singh; James Baugh; Uwe Dietze; Peter Dress

doi:10.1117/12.2029883

28 June 2013 Megasonic cleaning: effect of dissolved gas properties on cleaning

Hrishi Shende, Sherjang Singh, James Baugh, Uwe Dietze, Peter Dress

Proceedings Volume 8701, Photomask and Next-Generation Lithography Mask Technology XX; 870105 (2013) https://doi.org/10.1117/12.2029883
Event: Photomask and NGL Mask Technology XX, 2013, Yokohama, Japan

Abstract

Current and future lithography techniques require complex imaging improvement strategies. These imaging improvement strategies require printing of sub-resolution assist-features (SRAF) on photomasks. The size of SRAF’s has proven to be the main limiting factor in using high power Megasonic cleaning process on photomasks. These features, due to high aspect ratio are more prone to damage at low Megasonic frequencies and at high Megasonic powers. Additionally the non-uniformity of energy dissipated during Megasonic cleaning is a concern for exceeding the damage threshold of the SRAFs. If the cavitation events during Megasonic cleaning are controlled in way to dissipate uniform energy, better process control can be achieved to clean without damage. The amount and type of gas dissolved in the cleaning liquid defines the cavitation behavior. Some of the gases possess favourable solubility and adiabatic properties for stable and controlled cavitation behaviour. This paper particularly discusses the effects of dissolved Ar gas on Megasonic characteristics. The effect of Ar Gas is characterized by measuring acoustic energy and Sonoluminscense. The phenomenon is further verified with pattern damage studies.

Citation Download Citation

Hrishi Shende, Sherjang Singh, James Baugh, Uwe Dietze, and Peter Dress "Megasonic cleaning: effect of dissolved gas properties on cleaning", Proc. SPIE 8701, Photomask and Next-Generation Lithography Mask Technology XX, 870105 (28 June 2013); https://doi.org/10.1117/12.2029883

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