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28 June 2013 Mask degradation monitoring with aerial mask inspector
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Proceedings Volume 8701, Photomask and Next-Generation Lithography Mask Technology XX; 87010B (2013)
Event: Photomask and NGL Mask Technology XX, 2013, Yokohama, Japan
As design rule continues to shrink, microlithography is becoming more challenging and the photomasks need to comply with high scanner laser energy, low CDU, and ever more aggressive RETs. This give rise to numerous challenges in the semiconductor wafer fabrication plants. Some of these challenges being contamination (mainly haze and particles), mask pattern degradation (MoSi oxidation, chrome migration, etc.) and pellicle degradation. Fabs are constantly working to establish an efficient methodology to manage these challenges mainly using mask inspection, wafer inspection, SEM review and CD SEMs. Aerial technology offers a unique opportunity to address the above mask related challenges using one tool. The Applied Materials Aera3TM system has the inherent ability to inspect for defects (haze, particles, etc.), and track mask degradation (e.g. CDU). This paper focuses on haze monitoring, which is still a significant challenge in semiconductor manufacturing, and mask degradation effects that are starting to emerge as the next challenge for high volume semiconductor manufacturers. The paper describes Aerial inspector (Aera3) early haze methodology and mask degradation tracking related to high volume manufacturing. These will be demonstrated on memory products. At the end of the paper we take a brief look on subsequent work currently conducted on the more general issue of photo mask degradation monitoring by means of an Aerial inspector.
© (2013) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Wen-Jui Tseng, Yung-Ying Fu, Shih-Ping Lu, Ming-Sian Jiang, Jeffrey Lin, Clare Wu, Sivan Lifschitz, and Aviram Tam "Mask degradation monitoring with aerial mask inspector", Proc. SPIE 8701, Photomask and Next-Generation Lithography Mask Technology XX, 87010B (28 June 2013);


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