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28 June 2013 Development of optical system on novel Projection Electron Microscopy (PEM) for EUV masks and its basic performance evaluation
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Proceedings Volume 8701, Photomask and Next-Generation Lithography Mask Technology XX; 87010S (2013) https://doi.org/10.1117/12.2030647
Event: Photomask and NGL Mask Technology XX, 2013, Yokohama, Japan
Abstract
In order to realize pattern defect inspection for 1Xnm EUV mask, we are developing a novel projection electron microscopy (PEM) system; which enables us to make the inspection in high resolution and high throughput as compared with conventional DUV and EB inspection systems. To achieve the specification target, e.g., sensitivity of 16nm size in pattern defect and inspection speed of 19 hours/100mm square, we have examined to clear the required progress as compared to the current optical system for PEM; In order to meet the required progress, we made a new design concept and developed a new optical system, which comprises an exposure and an imaging electron optics. In this paper, we describe the evaluation on the basic performance of the developed optical system as concerning to the required progress: 1) transmittances over 10 times on the developed exposure optics and over 2 times on the developed imaging optics; 2) electron imaging being higher energy over 5 times and MTF inclination in hp44~64nm L/S pattern. The results show the developed optical system on the novel PEM is capable to meet the progress for 1Xnm EUV mask inspection.
© (2013) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Masahiro Hatakeyama, Takeshi Murakami, Kenji Terao, Kenji Watanabe, Yoshihiko Naito, Tsuyoshi Amano, Ryoichi Hirano, Susumu Iida, Tsuneo Terasawa, and Hidehiro Watanabe "Development of optical system on novel Projection Electron Microscopy (PEM) for EUV masks and its basic performance evaluation", Proc. SPIE 8701, Photomask and Next-Generation Lithography Mask Technology XX, 87010S (28 June 2013); https://doi.org/10.1117/12.2030647
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