IR CMOS: infrared enhanced silicon imaging

M. U. Pralle; J. E. Carey; Homayoon Haddad; C. Vineis; J. Sickler; X. Li; J. Jiang; F. Sahebi; C. Palsule; J. McKee

doi:10.1117/12.2015959

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11 June 2013 IR CMOS: infrared enhanced silicon imaging

M. U. Pralle, J. E. Carey, Homayoon Haddad, C. Vineis, J. Sickler, X. Li, J. Jiang, F. Sahebi, C. Palsule, J. McKee

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Proceedings Volume 8704, Infrared Technology and Applications XXXIX; 870407 (2013) https://doi.org/10.1117/12.2015959
Event: SPIE Defense, Security, and Sensing, 2013, Baltimore, Maryland, United States

Abstract

SiOnyx has developed visible and infrared CMOS image sensors leveraging a proprietary ultrafast laser semiconductor process technology. This technology demonstrates 10 fold improvements in infrared sensitivity over incumbent imaging technology while maintaining complete compatibility with standard CMOS image sensor process flows. Furthermore, these sensitivity enhancements are achieved on a focal plane with state of the art noise performance of 2 electrons/pixel. By capturing light in the visible regime as well as infrared light from the night glow, this sensor technology provides imaging in daytime through twilight and into nighttime conditions. The measured 10x quantum efficiency at the critical 1064 nm laser node enables see spot imaging capabilities in a variety of ambient conditions. The spectral sensitivity is from 400 to 1200 nm.

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M. U. Pralle, J. E. Carey, Homayoon Haddad, C. Vineis, J. Sickler, X. Li, J. Jiang, F. Sahebi, C. Palsule, and J. McKee "IR CMOS: infrared enhanced silicon imaging", Proc. SPIE 8704, Infrared Technology and Applications XXXIX, 870407 (11 June 2013); https://doi.org/10.1117/12.2015959

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