Low-frequency noise behavior at reverse bias region in InAs/GaSb superlattice photodiodes on mid-wave infrared

T. Tansel; K. Kutluer; A. Muti; Ö. Salihoglu; A. Aydinli; R. Turan

doi:10.1117/12.2016388

11 June 2013 Low-frequency noise behavior at reverse bias region in InAs/GaSb superlattice photodiodes on mid-wave infrared

T. Tansel, K. Kutluer, A. Muti, Ö. Salihoglu, A. Aydinli, R. Turan

Author Affiliations +

Proceedings Volume 8704, Infrared Technology and Applications XXXIX; 87040Y (2013) https://doi.org/10.1117/12.2016388
Event: SPIE Defense, Security, and Sensing, 2013, Baltimore, Maryland, United States

Abstract

We describe a relationship between the noise characterization and activation energy of InAs/GaSb superlattice Mid-Wavelength-Infrared photodiodes for different passivation materials applied to the device. The noise measurements exhibited a frequency dependent plateau (i.e. 1/f-noise characteristic) for unpassivated as well as Si₃N₄ passivated samples whereas 1/f-type low noise suppression (i.e. frequency independent plateau) with a noise current reduction of more than one order of magnitude was observed for SiO₂ passivation. For reverse bias values below -0.15V, the classical Schottky-noise calculation alone did not appear to describe the noise mechanism in a SL noise behavior, which shows a divergence between theoretically and experimentally determined noise values. We identify that, the additional noise appears, with and without passivation, at the surface activation energy of < 60 meV and is inversely proportional to the reverse bias. This is believed to be caused by the surface dangling-bonds (as well as surface states) whose response is controlled by the applied reverse bias. The calculated noise characteristics showed a good agreement with the experimental data.

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T. Tansel, K. Kutluer, A. Muti, Ö. Salihoglu, A. Aydinli, and R. Turan "Low-frequency noise behavior at reverse bias region in InAs/GaSb superlattice photodiodes on mid-wave infrared", Proc. SPIE 8704, Infrared Technology and Applications XXXIX, 87040Y (11 June 2013); https://doi.org/10.1117/12.2016388

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