Influence of pixel geometry on the 1/f noise coefficient

Francis Généreux; Jacques-Edmond Paultre; Bruno Tremblay; Francis Provençal; Christine Alain

doi:10.1117/12.2016250

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11 June 2013 Influence of pixel geometry on the 1/f noise coefficient

Francis Généreux, Jacques-Edmond Paultre, Bruno Tremblay, Francis Provençal, Christine Alain

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Proceedings Volume 8704, Infrared Technology and Applications XXXIX; 87041Q (2013) https://doi.org/10.1117/12.2016250
Event: SPIE Defense, Security, and Sensing, 2013, Baltimore, Maryland, United States

Abstract

This paper presents a systematic study of the 1/f noise coefficient as a function of pixel geometry for microbolometer structures. Structures with various VO_x widths, electrode gaps, electrode widths and via hole sizes were fabricated and characterized. The experimental results show that the 1/f noise coefficient is adversely affected by current non uniformity, in agreement with model predictions. Design parameters that significantly impact current non uniformity are identified and approaches to minimize their importance are proposed.

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Francis Généreux, Jacques-Edmond Paultre, Bruno Tremblay, Francis Provençal, and Christine Alain "Influence of pixel geometry on the 1/f noise coefficient", Proc. SPIE 8704, Infrared Technology and Applications XXXIX, 87041Q (11 June 2013); https://doi.org/10.1117/12.2016250

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