Numerical simulation of quantum efficiency and surface recombination in HgCdTe IR photon-trapping structures

Jonathan Schuster; Enrico Bellotti

doi:10.1117/12.2016496

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18 June 2013 Numerical simulation of quantum efficiency and surface recombination in HgCdTe IR photon-trapping structures

Jonathan Schuster, Enrico Bellotti

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Proceedings Volume 8704, Infrared Technology and Applications XXXIX; 87042Q (2013) https://doi.org/10.1117/12.2016496
Event: SPIE Defense, Security, and Sensing, 2013, Baltimore, Maryland, United States

Abstract

We have investigated the quantum effiency in HgCdTe photovoltaic pixel arrays employing a photon-trapping structure realized with a periodic array of pillars intended to provide broadband operation. We have found that the quantum efficiency depends heavily on the passivation of the pillar surface. Pillars passivated with anodicoxide have a large fixed positive charge on the pillar surface. We use our three-dimensional numerical simulation model to study the effect of surface charge and surface recombination velocity on the exterior of the pillars. We then evaluate the quantum efficiency of this structure subject to different surface conditions. We have found that by themselves, the surface charge and surface recombination are detrimental to the quantum efficiency but the quantum efficiency is recovered when both phenomena are present. We will discuss the effects of these phenomena and the trade offs that exist between the two.

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Jonathan Schuster and Enrico Bellotti "Numerical simulation of quantum efficiency and surface recombination in HgCdTe IR photon-trapping structures", Proc. SPIE 8704, Infrared Technology and Applications XXXIX, 87042Q (18 June 2013); https://doi.org/10.1117/12.2016496

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