Radiation effects in solar cells

Mitsuru Imaizumi; Takeshi Ohshima

doi:10.1117/12.2015362

29 May 2013 Radiation effects in solar cells

Mitsuru Imaizumi, Takeshi Ohshima

Proceedings Volume 8725, Micro- and Nanotechnology Sensors, Systems, and Applications V; 872515 (2013) https://doi.org/10.1117/12.2015362
Event: SPIE Defense, Security, and Sensing, 2013, Baltimore, Maryland, United States

Abstract

Two types of space solar cells, silicon single-junction and InGaP/GaAs/Ge triple-junction (3J) solar cells, have been primarily adopted for spacecraft. The conversion efficiencies of the solar cells under AM0, 1 sun condition are ~17% for silicon and ~30% for 3J cells. Radiation degradation occurs in space due to high-energy electrons and protons existing in space environment. The degradation is caused by radiation induced crystal defects which act as minority-carrier recombination centers and majority-carrier trap centers. The 3J cells are superior radiation resistant to the silicon cells, and this is mainly because the InGaP top-subcell has property of very high radiation resistance.

Citation Download Citation

Mitsuru Imaizumi and Takeshi Ohshima "Radiation effects in solar cells", Proc. SPIE 8725, Micro- and Nanotechnology Sensors, Systems, and Applications V, 872515 (29 May 2013); https://doi.org/10.1117/12.2015362

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