Paper
29 May 2013 Radiation-tolerant microprocessors in Japanese scientific space vehicles: how to maximize the benefits of commercial SOI technologies
Daisuke Kobayashi, Kazuyuki Hirose, Hirobumi Saito
Author Affiliations +
Abstract
Development of semiconductor devices not only for harsh radiation environments such as space but also for ground-based applications now faces a major hurdle of radiation problems. Necessary is protecting chips from malfunctions due to sub-nanosecond transient noises induced by radiation. As a protection technique using the silicon-on-insulator structure is often suggested, but the use in fact requires devices and circuits carefully optimized for maximizing its benefits. Mainly describing theoretical and experimental characterization of the transient effects, this paper presents a comprehensive study on radiation responses of commercial silicon-on- insulator technologies, which study results in a space-use low-power system-on-chip with a 100-MIPS RISC-based core.
© (2013) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Daisuke Kobayashi, Kazuyuki Hirose, and Hirobumi Saito "Radiation-tolerant microprocessors in Japanese scientific space vehicles: how to maximize the benefits of commercial SOI technologies", Proc. SPIE 8725, Micro- and Nanotechnology Sensors, Systems, and Applications V, 872517 (29 May 2013); https://doi.org/10.1117/12.2015658
Lens.org Logo
CITATIONS
Cited by 1 scholarly publication.
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Particles

Silicon

Transistors

Ions

Capacitance

Field effect transistors

Semiconductors

Back to Top